研究目的
Investigating the improvement of reverse leakage current characteristics in GaInN-based green LEDs with a sputtered AlN buffer layer compared to those with a conventional low-temperature GaN buffer layer.
研究成果
The study concluded that replacing the LT-GaN buffer layer with a SP-AlN buffer layer in GaInN-based green LEDs significantly improves the reverse leakage current characteristics by suppressing the variable-range-hopping process. This improvement is attributed to the reduction of threading dislocations and V-defects, leading to enhanced device reliability, lifetime, and electrical robustness.
研究不足
The study is limited to GaInN-based green LEDs and focuses on the reverse leakage current characteristics. The findings may not be directly applicable to other types of LEDs or optoelectronic devices.
1：Experimental Design and Method Selection:
The study involved preparing two GaInN-based LEDs, each grown on a c-sapphire substrate with either a SP-AlN buffer layer or a conventional LT-GaN layer. The SP-AlN buffer layer was deposited using a sputtering technique, while the LT-GaN buffer layer was grown by metalorganic vapor phase epitaxy (MOVPE).
2：Sample Selection and Data Sources:
The samples were characterized under reverse bias to measure I–V and C–V curves using a Keithley semiconductor parameter analyzer.
3：List of Experimental Equipment and Materials:
A sintered AlN target, Ar–N2 gas mixture, and sapphire substrates were used.
4：Experimental Procedures and Operational Workflow:
The SP-AlN layer was deposited under controlled conditions, and the epitaxial structures of the green LEDs were grown identically for both samples.
5：Data Analysis Methods:
The conduction mechanisms responsible for the reverse leakage current were analyzed based on the I–V and C–V characteristics.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
