研究目的
To present a novel device called the ballistic rectifier which circumvents the problem of opening a bandgap in graphene and to propose four different asymmetric planar structures for THz detection.
研究成果
Four GBRs with different structures were presented, all showing an intrinsic responsivity higher than 1,000 V/W at room temperature. The devices can be used as THz detectors, and using CVD graphene could reduce the cost and allow more scalability of fabrication.
研究不足
The study is limited to the fabrication and measurement of four specific GBR structures. The scalability and cost-effectiveness of using CVD graphene instead of exfoliated graphene are mentioned as potential areas for optimization.
1：Experimental Design and Method Selection:
The hBN/Gr/hBN stacks were prepared using exfoliation and dry transfer techniques. The patterns were defined using electron-beam lithography and etched by using a reactive ion etching system. The contacts were deposited using electron-beam evaporation. All devices are measured using a Signal Recovery 7265 lock-in amplifier and Agilent 34411 Digital Multimeter.
2：Sample Selection and Data Sources:
The hBN/Gr/hBN stacks were transferred onto 90 nm thick SiO2/Si substrate.
3：List of Experimental Equipment and Materials:
Signal Recovery 7265 lock-in amplifier, Agilent 34411 Digital Multimeter, electron-beam lithography system, reactive ion etching system, electron-beam evaporation system.
4：Experimental Procedures and Operational Workflow:
The measurement setup includes a 1 MΩ resistor connected to the output of lock-in amplifier to supply a constant AC current. All measurements are done in vacuum in a cryostat system.
5：Data Analysis Methods:
The rectified voltage and noise equivalent power (NEP) were calculated using specific formulas provided in the paper.
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