研究目的
Investigating the suppression of edge breakdown in avalanche photodiodes using Zn diffusion and selective area growth, and the impact of CBrCl3 on surface morphology and dark current reduction.
研究成果
The use of CBrCl3 during the SAG process prior to Zn diffusion is beneficial in suppressing premature edge breakdown and reducing dark current in avalanche photodiodes. Floating guard rings are effective in reducing dark current originating from surface leakage. The improvements are related to the effects of CBrCl3 on SAG morphology and modifications of the Zn diffusion front shape at the device periphery and the FGRs.
研究不足
The study is limited to the specific conditions of the SAG process and the use of CBrCl3. The impact of other precursors or conditions on edge breakdown suppression and dark current reduction is not explored. The study also does not address the scalability of the process for industrial applications.
1：Experimental Design and Method Selection:
The study involves the fabrication and characterization of avalanche photodiodes using a single diffusion process with selective area growth prior to diffusion. The impact of CBrCl3 on the process is evaluated.
2：Sample Selection and Data Sources:
The substrates are (100) oriented InP:S with misorientation in the range 0.05-0.1o toward <111>B. Over 40 devices were cleaved along the [0-11], [011] and [001] directions and inspected by SEM.
3：05-1o toward <111>B. Over 40 devices were cleaved along the [0-11], [011] and [001] directions and inspected by SEM.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: InP:Si layer grown by SAG under two conditions (with and without CBrCl3), di-methyl zinc (DMZn) for Zn diffusion, rapid thermal annealing (RTA) equipment, scanning electron microscopy (SEM), secondary ion mass spectroscopy (SIMS).
4：Experimental Procedures and Operational Workflow:
After diffusion mask definition, an InP:Si layer was grown by SAG under two conditions. A single Zn diffusion process was carried out followed by RTA. After metallization steps, on-wafer electrical characterization was performed including I-V measurements and photocurrent mapping.
5：Data Analysis Methods:
SEM and SIMS were used to investigate the geometric aspects and quantify the Zn and Si concentrations, respectively. Photocurrent mapping was used to characterize the electric field distribution in the multiplication layer.
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