研究目的
Investigating the internal optical loss and internal quantum efficiency in high-power edge-emitting semiconductor lasers operating at different current and temperature levels.
研究成果
The experimental technique demonstrated is capable of investigating the internal optical loss and internal quantum efficiency in high-power lasers operating at different current and temperature levels. The comparison of two heterostructures showed that the use of an undoped AlGaAs waveguide allows better suppression of the internal quantum efficiency drop but makes the internal optical loss more sensitive to current. The technique has potential for further development, including measuring the internal optical loss distribution along the cavity length and investigating two-photon absorption effects.
研究不足
The technique requires precise coupling of the probe beam into the laser sample waveguide, and any errors can lead to inaccurate absorption measurements. The wavelength difference between the sample self-emission and the probe emission is neglected, which may introduce errors.
