研究目的
Investigating the influence of molybdenum oxide thickness, electronic structure, and work function on the performance of hole selective silicon heterojunction solar cells.
研究成果
The study concludes that MoOx is an effective dopant-free passivation and hole selective contact layer for high-efficiency silicon heterojunction solar cells, offering advantages of a low-temperature fabrication process with no toxicity. The optimal thickness of MoOx was found to be 10 nm, achieving an efficiency of 20.04%. However, performance degrades with increasing thickness due to oxygen deficiency and parasitic absorption.
研究不足
The study notes a severe degradation in fill factor (FF) and short-circuit current density (Jsc) with increasing MoOx thickness due to diffusion of layers and high parasitic absorption. Additionally, MoOx is sensitive to air, leading to an increase in oxidation deficiency and degradation in carrier lifetime and implied voltage after exposure to normal air.
1:Experimental Design and Method Selection:
The study involved the fabrication of hole selective MoOx/n-Si heterocontact solar cells to investigate the influence of MoOx thickness, electronic structure, and work function. The optical properties, chemical composition, and electronic structure of MoOx films were analyzed using spectroscopic ellipsometry, X-ray photoelectron spectroscopy (XPS), and ultra-violet photoemission spectroscopy (UPS). Transmission electron microscopy (TEM) was used to examine the interface contact between layers.
2:Sample Selection and Data Sources:
Czochralski-grown phosphorous-doped n-type c-Si substrates were used. The samples were chemically textured and cleaned before deposition of layers.
3:List of Experimental Equipment and Materials:
Spectroscopic ellipsometry (VASE, J.A Woollam and SCINCO S-3100), X-ray photoelectron spectrometer (ESCALAB 250Xi), TEM (JEM-2100F), and standard AM
4:5G and SCS-100 systems for J-V and external quantum efficiency measurements. Experimental Procedures and Operational Workflow:
The samples underwent chemical texturing, cleaning, deposition of undoped a-Si:H(i) and doped a-Si:H(n) layers, MoOx deposition, ITO deposition, and silver electrode fabrication. The samples were then annealed and characterized.
5:Data Analysis Methods:
Optical transmittance, XPS spectra, TEM images, and J-V characteristics were analyzed to evaluate the performance and properties of the solar cells.
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