研究目的
Investigating the growth of InAs quantum dots (QDs) in metamorphic InGaAs matrix for long-wavelength laser applications on GaAs substrates by molecular beam epitaxy (MBE).
研究成果
The study successfully demonstrated the growth of InAs QDs in metamorphic InGaAs matrix with a five-step graded InGaAs MBL by MBE. Anisotropic relaxation behavior in the metamorphic InGaAs matrix was revealed, leading to emission at 1.6 μm from InAs QDs at RT. This presents great potential in realizing C-/L-band InAs QD lasers using metamorphic InGaAs matrix.
研究不足
The study is limited by the technical constraints of MBE growth and the potential for defect formation in the metamorphic InGaAs matrix, which could affect the performance of the QDs.
1：Experimental Design and Method Selection:
The study demonstrates the growth of InAs QDs in metamorphic InGaAs matrix using MBE. A five-step graded InGaAs metamorphic buffer layer (MBL) with a final indium composition of about 40% was used.
2：Sample Selection and Data Sources:
Samples were grown on Si-doped GaAs (001) substrates.
3：List of Experimental Equipment and Materials:
A standard solid source molecular beam epitaxy (MBE) system was used.
4：Experimental Procedures and Operational Workflow:
Native oxidation was removed at a high substrate temperature at over 600 (cid:4)C under arsenic-rich conditions followed by growing a 300 nm GaAs buffer layer. A graded InGaAs MBL consisted of five steps with 200 nm in thickness and an additional 8% in indium composition for each step.
5：Data Analysis Methods:
The surface morphology of InGaAs MBL and InAs QDs was observed by atomic force microscopy (AFM). Reciprocal space mapping (RSM) was carried out to investigate the structural properties and relaxation behaviors of the MBL by X-ray diffraction (XRD). RT and low-temperature (LT) PL spectra of the samples were characterized using a Ti: Sapphire laser with a wavelength of 730 nm.
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