研究目的
To investigate the oxidation confinement method applied in the active layer of the ridge waveguide Quantum Cascade Laser (QCL) to enhance the current and optical constrict.
研究成果
The oxidation confinement method is attractive as the low cost method to decrease the threshold current of QCL. The AlInAs layers in the active region were oxidized and became current confinement layers, resulting that the threshold current became lower than the non-oxidized one.
研究不足
The oxidation areas affect as the current confinement layers, but the exact mechanism and optimization of the oxidation process need further investigation.
1：Experimental Design and Method Selection:
The QCL structure was epitaxial grown on an n-doped InP substrate by solid-source molecular beam epitaxy (MBE). The oxidation confinement structure was formed in the layers with aluminum content in the active region by producing water vapor via an vaporizer at 460℃ in 8 hours.
2：Sample Selection and Data Sources:
The active region consists of 30 stages AlInAs/InGaAs strain balanced structure designed to emit at a wavelength of
3：3?m. List of Experimental Equipment and Materials:
Solid-source molecular beam epitaxy (MBE), ICP dry etching using SiO2 hard mask, vaporizer.
4：Experimental Procedures and Operational Workflow:
Ridge waveguide structure was patterned by ICP dry etching. After ridge formation, the oxidation confinement structure was formed. Non oxidized device was also fabricated to compare the device performance.
5：Data Analysis Methods:
EDX measurement was used to analyze the oxidation areas.
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