研究目的
Investigating the preparation of Cu2ZnSn(S,Se)4 thin films by the sol-gel method followed by a modified three-step selenization process to improve solar cell performance.
研究成果
The modified three-step selenization process effectively suppressed the formation of secondary phases and a fine-grain bottom layer, leading to reduced carrier recombination and improved solar cell performance. The best solar cell achieved a power conversion efficiency of 7.17%.
研究不足
The study focuses on the sol-gel method and a specific selenization process, which may not be directly applicable to other fabrication methods or materials. The efficiency of the solar cells, while improved, is still below the highest reported values for similar materials.
1：Experimental Design and Method Selection
The study employed a sol-gel method based on dimethyl sulfoxide solution followed by a modified three-step selenization process. The key innovation was dividing the Se evaporation and annealing into two different stages.
2：Sample Selection and Data Sources
Precursor solution was prepared by dissolving Cu(CH3COO)2, SnCl2, ZnCl2, and thiourea in dimethyl sulfoxide (DMSO) solution. CZTS precursor films were spin-coated onto molybdenum coated soda-lime glass substrates.
3：List of Experimental Equipment and Materials
Hitachi S4800 field emission scanning electron microscope (FE-SEM), X-ray diffraction (XRD) patterns with a M18XHF-SRA diffractometer, Raman spectrum with a Nd-YAG 532 nm laser, Thermal i-cap 6300 inductively coupled plasma mass spectrometry (ICP), secondary ion mass spectroscopy (SIMS, IMS-4F), Keithley 2400 source-measure unit for J-V measurements.
4：Experimental Procedures and Operational Workflow
The precursor films were selenized in a three-step process involving Se evaporation and annealing under different conditions. The films were then characterized for morphological, structural, elemental distributional, and photovoltaic properties.
5：Data Analysis Methods
The size of the crystallites was calculated by the Scherrer equation. Elemental composition measurements were carried out with ICP. The depth profiles of the elements were obtained by SIMS.
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