研究目的
To study and optimize the ICP dry etching process parameters of GaN/AlN periodically-stacked-structure (PSS) for avalanche photodiode fabrication, focusing on achieving excellent surface morphology and nearly vertical sidewalls, and to analyze the effects on the dark current of the APD.
研究成果
The optimized ICP dry etching procedure for GaN/AlN PSS significantly improves the surface morphology and sidewall verticality, leading to a substantial reduction in the dark current of the APD. This improvement is achieved at the cost of a slower etching rate, but the benefits in device performance justify the trade-off. The findings are applicable to other semiconductor devices made of GaN/AlN heterostructures.
研究不足
The study acknowledges that decreasing the Cl2 gas flow slows the etching rate of GaN/AlN PSS, which is a trade-off for achieving a smoother surface and more vertical sidewall. The optimization process is specific to GaN/AlN PSS and may not be directly applicable to other materials or structures without further adjustments.
