研究目的
To fabricate NOx gas sensors with high-selectivity and low-power using GaAs-based Schottky diodes functionalized by alkanethiolates.
研究成果
The studied alkanedithiol modified Au/GaAs Schottky diode shows good sensing performance for NOx gas at 25℃, with high selectivity and low-power consumption, making it a promising candidate for NOx sensing applications.
研究不足
The study focuses on the NOx sensing performance under specific conditions and does not explore the sensor's performance under a wider range of environmental conditions or with other gases.
1：Experimental Design and Method Selection:
The study involved the fabrication of GaAs-based Schottky diodes functionalized by alkanethiolates to form a self-assembled monolayer (SAM) on the surface of the Au (111) Schottky contacts of the n-GaAs substrate using immersion method.
2：Sample Selection and Data Sources:
The adsorption behaviors between SAM and Au (111) with different terminal (functional) groups, carbon numbers (CN), immersion times (tim), and alkanedithiol concentrations were characterized.
3：List of Experimental Equipment and Materials:
Cyclic voltammetry (CV) measurement and an ultraviolet/visible (UV-Vis) spectrophotometer were used.
4：Experimental Procedures and Operational Workflow:
The NOx sensing performance of the studied device was investigated at different temperatures and NOx gas concentrations.
5：Data Analysis Methods:
The interaction between NOx molecules and SAM was determined by UV-Vis spectrophotometer.
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