研究目的
Investigating the optoelectronic properties of formamidinium tin triiodide (FASnI3) thin films as a function of doping density and comparing them to lead-based materials to understand the limits to charge transport.
研究成果
The study reveals that at lower doping densities, mobility values approach 500 cm2V-1s-1 at 50 K, suggesting that phonon scattering is dominant and mobility values are reaching their intrinsic limits. The exciton binding energy of FASnI3 was determined to be 3.1 meV, in agreement with its low bandgap energy.
研究不足
High levels of p-doping in tin-based perovskites lead to short charge-carrier lifetimes and diffusion lengths, limiting their efficiency compared to lead-based analogues.
