研究目的
To investigate the performance of resonant-cavity-enhanced GeSn photodetectors (RCE PDs) with a 10% Sn content for operation at 2000 nm, aiming to achieve high quantum efficiency in the short-wavelength infrared (SWIR) regime.
研究成果
The RCE GeSn PDs with a 10% Sn content designed for 2000 nm operation exhibit a quantum efficiency up to 91%, significantly higher than non-RCE structures. This demonstrates the potential of RCE GeSn PDs for high-response SWIR detection applications.
研究不足
The study is limited by the fabrication cost and the complexity of achieving high reflectance mirrors for the RCE structure. The practical application may also be hindered by the need for precise control over the GeSn layer thickness and Sn content.
1：Experimental Design and Method Selection:
The study involves the growth of GeSn with a 10% Sn content using CVD and the design of RCE PDs for 2000 nm operation. The quantum efficiency of the RCE PDs is calculated using a theoretical model considering the reflectance of the mirrors and the cavity length.
2：Sample Selection and Data Sources:
A 560 nm GeSn layer with 1000 nm Ge virtual substrate was grown on (100) Si substrate. The reflectance of the Si/SiO2 DBR was simulated by the transfer matrix method.
3：List of Experimental Equipment and Materials:
CVD deposition tool from Applied Materials for growing GeSn layer, Si/SiO2 DBR as the bottom mirror, and air/GeSn interface as the top mirror.
4：Experimental Procedures and Operational Workflow:
The GeSn material was characterized, and the RCE PD was designed with careful consideration of the quantum efficiency equation. The thickness of the GeSn layer was optimized for maximum quantum efficiency.
5：Data Analysis Methods:
The quantum efficiency was simulated versus GeSn thickness for both RCE and non-RCE structures, and the spectral quantum efficiency was calculated for the optimized cavity length.
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