研究目的
To demonstrate selective oxidation of the surface layer of bilayer WSe2 by using 532 nm laser irradiation and to understand the anisotropic oxidation properties of WSe2 films.
研究成果
The study demonstrated layer-selective oxidation and the anisotropic oxidation property of bilayer WSe2 films, providing guidance for elucidating the oxidation process in low-dimensional systems.
研究不足
The fragility of doped states and their intolerance to the fabrication process. High incident laser power is not suitable for layer-selective oxidation.
1：Experimental Design and Method Selection:
Utilized the anisotropies of WSe2 films to selectively oxidize the surface layer by laser heating.
2：Sample Selection and Data Sources:
Prepared WSe2 flakes by mechanical exfoliation from bulk crystals of 2H-WSe2 and printed on Si/SiO2 substrates.
3：List of Experimental Equipment and Materials:
Used a Raman system with a 532 nm laser for irradiation.
4：Experimental Procedures and Operational Workflow:
Directly irradiated a particular area with laser scanning, monitored the modification progress using Raman spectrum and PL peak shape.
5：Data Analysis Methods:
Analyzed the PL peak components to understand the oxidation effects.
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