研究目的
Investigating the enhancement of quantum efficiency and absorption coverage extension in germanium-on-insulator (GOI) metal-semiconductor-metal (MSM) photodetectors using recessed silicon nitride (SiNx) sidewall stressor.
研究成果
The recessed SiNx-strained GOI MSM photodetectors demonstrated a significant extension in absorption coverage and enhancement in quantum efficiency, potentially extending Ge for broadband high-speed integrated photonics.
研究不足
The study focuses on the L-band enhancement and does not explore the potential for further wavelength extensions or the impact on device speed performance.
1：Experimental Design and Method Selection:
The study employed finite element method for strain modelling and fabricated recessed SiNx-strained GOI MSM photodetectors.
2：Sample Selection and Data Sources:
GOI waveguides with specific dimensions were used.
3：List of Experimental Equipment and Materials:
Electron-beam lithography (EBL), reactive-ion etching (RIE), atomic layer deposition (ALD), and plasma-enhanced chemical vapor deposition (PECVD) were utilized.
4：Experimental Procedures and Operational Workflow:
The process involved patterning GOI into strip waveguides, forming recessed trenches, depositing Al2O3, fabricating Schottky contacts, and depositing SiNx stressor.
5：Data Analysis Methods:
Photocurrents were measured and normalized for comparison.
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