研究目的
Investigating the generation of red-kinked current-voltage characteristics in Cu(In,Ga)Se2 solar cells due to buffer/window interfacial defects.
研究成果
The data reveal that the degree of the red kink is affected by both the donor density in the n-type window and the CdS buffer/window interfacial defect density. To avoid the red kink, the defect density values must be kept below certain thresholds depending on the donor density. The fill factor values significantly decrease with increasing defect density, limiting the efficiencies of the solar cells.
研究不足
The experimental control and measurement of CdS buffer/window interfacial defect density in CIGS solar cells would be difficult. The comparison between the measured J-V and the simulated J-V would be useful to estimate the defect density based on the measured donor density.
