研究目的
To investigate the effect of self-assembled monolayer (SAM) molecules based on phenylboronic acid derivatives on the morphology of the organic active layer and the electrical performances of OFETs.
研究成果
SAM molecules based on PBA effectively passivated the Al2O3 surface, reducing interfacial trap densities and consequently lowering subthreshold slopes. Higher current on/off ratios and decreased threshold voltages were achieved. However, the slight increase in surface roughness due to SAM grafting hindered further mobility enhancement.
研究不足
The study found that SAM treatment slightly increased surface roughness, which could hinder further mobility enhancement. The mobility of the devices did not show significant differences, indicating that the SAMs probably did not have a prominent impact on the morphology of the organic active layer.
1：Experimental Design and Method Selection:
The study involved applying phenylboronic acid derivatives as SAMs between dielectric and organic semiconductor layers to improve OFET parameters.
2：Sample Selection and Data Sources:
Al2O3 surfaces were treated with SAM molecules, and DNTT was selected as the active layer.
3：List of Experimental Equipment and Materials:
AFM, contact angle goniometer, thermal evaporation equipment, and a semiconductor parameter analyzer were used.
4：Experimental Procedures and Operational Workflow:
SAM treatment was performed by dipping in SAM solution, followed by DNTT deposition and device fabrication.
5：Data Analysis Methods:
Electrical characteristics were analyzed using a semiconductor parameter analyzer, and morphological properties were analyzed using AFM and contact angle techniques.
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