研究目的
To investigate the increase of absorption in semiconductor materials caused by laser radiation with wavelength in the range of the material's absorption-edge.
研究成果
The study demonstrates the possibility of obtaining local changes in the structure of transparent semiconductors using light from the spectral range of the material's fundamental absorption edge. This method requires significantly less intensity than traditional methods using femto- and nanosecond lasers.
研究不足
The study is limited to monocrystalline ZnSe and may not directly apply to other materials without further investigation. The threshold intensity for structural changes is relatively high, which may limit practical applications.
1：Experimental Design and Method Selection:
The study involves an analytical and experimental investigation of the thermal effect on the absorption of light in semiconductor materials. Theoretical models include the Urbach formula for absorption coefficient dependence on photon energy.
2：Sample Selection and Data Sources:
Monocrystalline ZnSe samples were used, with initial absorption coefficient measured using a spectrophotometer.
3：List of Experimental Equipment and Materials:
Tunable laser LOTIS, dielectric mirrors, telescope, aperture, optical filter, lens, ZnSe sample, photodiode, oscilloscope Tektronix TDS2012B, spectrophotometer Perkin Elmer Lambda
4：Experimental Procedures and Operational Workflow:
6 The experiment consisted of determining the threshold intensity for structural changes on the material surface and investigating structural changes inside the material volume by focusing laser beam under the surface.
5：Data Analysis Methods:
The change in material temperature under laser irradiation was analyzed using differential equations considering thermal raise of absorption coefficient.
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