研究目的
To theoretically study the influence of a quasistationary electric field on ultrafast electron transfer near the silicon-vacuum interface irradiated by femtosecond laser pulses, estimate the strength of the arising quasistationary field, study the possibility of forming a dynamic optically layered structure, and investigate the generation of electromagnetic radiation in the terahertz frequency range.
研究成果
The study concludes that a quasistationary electric field plays a decisive role in ultrafast electron dynamics above the irradiated silicon surface for electron fluences near and above damage thresholds. It questions the feasibility of forming a dynamic waveguide as previously hypothesized and suggests a new method for generating terahertz pulses through emission charge separation.
研究不足
The study is theoretical and relies on numerical simulations. The real values of field intensity inside silicon may differ due to the approximation of macroscopic dielectric constant and the smooth transition of field changes at interatomic distances.
