研究目的
Investigating an alternative method for graphene production using laser beam as a heating source to help thermal decomposition of silicon carbide.
研究成果
Laser heating was shown to be a promising option for potential graphene fabrication, with the potential for optimization to provide uniformly grown graphene sheets.
研究不足
The laser heating method showed promise but the 2D peak of graphene had a full width half maximum too broad for monolayer graphene, indicating the need for optimization in laser power, scanning speed, and chamber design.
1:Experimental Design and Method Selection:
The study compares traditional thermal decomposition using a high temperature furnace with an alternative method using a laser beam for heating silicon carbide.
2:Sample Selection and Data Sources:
Polished n-type 4H silicon carbide samples were used, cleaned using a chemical process (RCA clean), and treated with various solutions.
3:List of Experimental Equipment and Materials:
High temperature furnace (JIPELEC), CO2 laser cutting machine (HPC Laserscript), stainless steel chamber with adjustable sample holder, sodium chloride window, pressure gauge, argon gas bottle.
4:Experimental Procedures and Operational Workflow:
Traditional method involved heating in a high temperature furnace under vacuum. The alternative method used a laser beam to scan the silicon carbide sample under argon gas flow.
5:Data Analysis Methods:
Raman spectroscopy was used to assess the quality of graphene produced.
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