研究目的
Investigating the influence of annealing process in Zn atmosphere on defective-impurity compound (DIC) and intensity of mid-IR cathodoluminescence (CL) in ZnSe:Fe crystals.
研究成果
Annealing in Zn atmosphere increases the EL and mid-IR CL intensity in ZnSe:Fe crystals, likely due to purification of the sample and reduction of recombination channels. Structural defects and Te impurities are affected by the annealing process.
研究不足
The study is limited to the effects of annealing in Zn atmosphere on ZnSe:Fe crystals and does not explore other annealing conditions or materials.
1:Experimental Design and Method Selection:
The study focuses on the influence of annealing on ZnSe:Fe crystals using TPCM and CL techniques.
2:Sample Selection and Data Sources:
ZnSe single crystals doped with Fe by thermal diffusion, with Iron concentrations from
3:01 to 14 wt.%. List of Experimental Equipment and Materials:
Carl Zeiss LSM NLO 710 for TPCM, pulsed electron gun for CL.
4:Experimental Procedures and Operational Workflow:
Samples were observed by TPCM and CL before and after annealing in Zn atmosphere.
5:Data Analysis Methods:
Analysis of luminescence intensity and distribution before and after annealing.
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