摘要： Short-circuit current (ISC) values of test photovoltaic (PV) modules, i.e., multi-crystalline silicon, heterostructure-with-intrinsic-thin-layer, single-crystalline silicon back-contact, CuInSe2 (CIS), and CdTe modules, are descripted using multiple regression analysis based on environmental factors (solar irradiance, average photon energy (APE), and module temperature (Tmod)) under several solar irradiance levels. The APE is an index of the solar spectral irradiance distribution. PV module irradiance sensor is used to investigate simultaneous solar irradiance (PVMS), single-crystalline silicon PV module, (IrrTPVMS). It is disclosed that ISC is primarily determined by IrrTPVMS. Error between the estimated ISC and measured ISC of test PV modules is investigated. Consequently, precise ISC description (low error) is obtained when IrrTPVMS is utilized. The more precise description of the ISC for CIS and CdTe PV modules, having the bandgap (Eg) different from PVMS, is realized when adding APE environment factor even under low IrrTPVMS ((cid:1)0 kW/m2), accumulated on both sunny day and cloudy day suggesting the enhancement of investigation opportunity. This is because APE minimizes spectral mismatch error caused by Eg difference between PVMS and test PV module. Moreover, the precision of ISC description is further increased under enhanced IrrTPVMS of (cid:1)0.5 kW/m2 (on sunny day) due to stable solar irradiance.