研究目的
Investigating the monolithic integration of micro-LEDs with MOSFETs on GaN-on-Si substrates to realize an active matrix display.
研究成果
The monolithic integration of micro-LEDs and MOSFETs on GaN-on-Si substrates has been demonstrated, showing potential for active matrix displays. Further optimizations in device structure and fabrication process are needed for improved performance.
研究不足
The higher forward voltage of micro-LEDs due to un-optimized mesa depth and ohmic contacts, and the lower mobility of electrons in MOSFETs compared to typical values.
1：Experimental Design and Method Selection:
The study involved the fabrication of a micro-LED display on a GaN-on-Si wafer, integrating nitride-based LEDs with Si TFTs as driving circuitries.
2：Sample Selection and Data Sources:
A blue-emitting LED epitaxial structure was grown on a 4-inch silicon wafer.
3：List of Experimental Equipment and Materials:
Equipment included metal-organic chemical vapor deposition for LED epitaxial growth, inductively coupled plasma etching for GaN deep etching, and a Keithley 4200 for electrical measurements. Materials included GaN-on-Si substrates and metal layers for TFT fabrication.
4：Experimental Procedures and Operational Workflow:
The process included LED epitaxial growth, dry etching for isolation, TFT fabrication on exposed Si, and integration of LEDs with TFTs.
5：Data Analysis Methods:
Electrical and optical properties were analyzed using a CT-140 spectrometer and Keithley 4200.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
