研究目的
Investigating the growth of Ga-polar n-GaN nanowires on n-Si(111)/AlN templates using a novel site- and polarity-controlled metal organic vapor phase epitaxy approach.
研究成果
The study successfully demonstrated a novel approach for the growth of Ga-polar n-GaN nanowires on Si templates, achieving homogeneous islands and continuous nanowire epitaxy. The results provide insights into the control of nanowire growth direction and morphology, paving the way for future applications in optoelectronics.
研究不足
The study is limited by the technical constraints of MOVPE and the challenges in achieving uniform growth across all nanowires. Potential areas for optimization include the control of parasitic nucleation and the adjustment of growth parameters for better uniformity.
1：Experimental Design and Method Selection:
A three-stage process for GaN nanowire growth was developed, involving the formation of Ga-polar GaN islands, changing the growth direction to vertical, and achieving continuous nanowire epitaxy.
2：Sample Selection and Data Sources:
Small hexagonally arranged pillar stumps on a Si(111) wafer were used as templates.
3：List of Experimental Equipment and Materials:
An AIXTRON 3 × 2″ close-coupled-showerhead reactor equipped with trimethylaluminum, -gallium, and ammonia was used for MOVPE.
4：Experimental Procedures and Operational Workflow:
The process included a H2-bake, growth of a conformal AlN layer, and GaN epitaxy under varying conditions.
5：Data Analysis Methods:
In situ interferometry and ex situ SEM were used for characterization.
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