研究目的
To develop coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band.
研究成果
The study successfully demonstrates the growth and characterization of coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures on Si substrates, achieving room temperature emission in the telecommunication O band. The fabricated light emitting diode exhibits electroluminescence at 1.26 μm, showcasing the potential for monolithically integrated optoelectronic devices on Si.
研究不足
The study is limited by the technical challenges of heteroepitaxy of III-As semiconductors on Si substrates, requiring thick buffer layers and advanced designs to reduce threading dislocations. The electrical performance of the fabricated LEDs could be improved by optimizing the doping profiles and interfaces.
1：Experimental Design and Method Selection:
The study involves the growth of coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructures on Si(111) substrates using molecular beam epitaxy (MBE). The heterostructure includes an InAs quantum dot shell embedded in an In
2：15Ga85As quantum well shell, with a GaAs outer shell for confinement. Sample Selection and Data Sources:
Samples were grown on p-type Si(111) substrates covered with a thermal oxide mask patterned by electron beam lithography.
3：List of Experimental Equipment and Materials:
MBE system equipped with In, Al, Bi, and Ga effusion cells, Be and Si effusion cells for dopants, and valved cracker sources for As
4：Experimental Procedures and Operational Workflow:
The growth process includes Ga predeposition, GaAs nanowire core growth by the vapor-liquid-solid method, coaxial DWELL shell growth, and GaAs outer shell growth.
5：Data Analysis Methods:
Structural analysis was performed using scanning transmission electron microscopy (STEM), and optical characterization was done using cathodoluminescence (CL) and photoluminescence (PL) spectroscopy.
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