研究目的
Investigating the effect of annealing temperature on the microstructure and bonding characteristics of amorphous-microcrystal MoSx film and its impact on the efficiency of heterojunction solar cells.
研究成果
The optimal annealing temperature for MoSx films on silicon substrates was found to be 500 °C, where the film exhibited a transition from amorphous to microcrystalline phase, leading to the highest solar cell efficiency of 7.55%. Further increases in temperature led to decreased film quality and efficiency.
研究不足
The study is limited to the effect of annealing temperature on MoSx films and does not explore other parameters that might affect film quality and solar cell efficiency. The highest efficiency achieved was 7.55%, indicating room for improvement.
1:Experimental Design and Method Selection:
The sol–gel method was used to prepare amorphous-microcrystal MoSx films on a p-Si substrate. The effect of annealing temperature on the films was analyzed.
2:Sample Selection and Data Sources:
MoSx precursor solution was prepared using (NH4)2MoS4 and ethylene glycol. Films were annealed at temperatures ranging from 400 °C to 800 °C.
3:List of Experimental Equipment and Materials:
Tube furnace (MTI, GSL-1600X-II), laser Raman spectrometer (HORIBA Jobin Yvon LabRAM HR Evolution), atomic force microscope (Bruker), IPCE testing system (CROWNTECH), semiconductor device parameter analyzer (Agilent B1500A).
4:Experimental Procedures and Operational Workflow:
The precursor solution was spin-coated on p-Si substrates, annealed under Ar and H2 gases, and characterized for structural and photovoltaic properties.
5:Data Analysis Methods:
Raman spectroscopy, AFM, XPS, J–V curve analysis, EQE spectrum analysis.
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