研究目的
To develop a nondestructive spectroscopic approach based on electroreflectance (ER) for determining buffer bandgap energies in Cu(In,Ga)Se2 (CIGS) solar cells, specifically focusing on Zn(O,S) buffer layers, and to identify secondary phases within these buffers.
研究成果
The developed averaged ARER approach effectively suppresses interference-related line-shape distortions and improves the signal-to-noise ratio, making it superior for nondestructive bandgap determination of thin buffer layers in CIGS solar cells. Additionally, a Cu-containing secondary phase was identified in the Zn(O,S) buffer, demonstrating the method's utility in material characterization.
研究不足
The method's accuracy is limited by the signal-to-noise ratio, especially for very thin buffer layers. The presence of interference effects, although suppressed, may still affect the results. The technique requires careful calibration and may not be universally applicable to all types of buffer materials.
1：Experimental Design and Method Selection:
The study utilized angle-resolved electroreflectance (ARER) spectroscopy to measure bandgap energies in CIGS solar cells. The method involves measuring a set of ER spectra in different reflection configurations and averaging the modulus spectra to suppress interference effects.
2：Sample Selection and Data Sources:
Samples included CIGS solar cells with CdS and Zn(O,S) buffers. The CIGS absorbers were fabricated using in-line coevaporation processes, and buffers were grown by chemical bath deposition.
3：List of Experimental Equipment and Materials:
A 250 W quartz-tungsten halogen lamp and an InGaAs (Si) photodiode were used for light source and detection, respectively. A monochromator, digital multimeter, and lock-in amplifier were also employed.
4：Experimental Procedures and Operational Workflow:
ER spectra were measured in reflection configurations with varying angles of incidence and detection. The spectra were transformed into modulus spectra and averaged to determine bandgap energies.
5：Data Analysis Methods:
The averaged modulus spectra were fitted by a Gaussian to determine bandgap energies. Scanning transmission electron microscopy (STEM) and energy-dispersive X-ray spectroscopy (EDXS) were used for chemical analysis.
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