研究目的
Investigating the fabrication and performance of Germanium quantum dot (GeQD) infrared photodetectors addressed by self-aligned silicon nanowire electrodes for integration into Si optoelectronics.
研究成果
The study successfully demonstrates the fabrication of GeQD infrared photodetectors with a responsivity of 1.5 mA/W and a photoconductive gain >102 at 1550 nm wavelength. The results indicate a promising approach for integrating individual GeQDs into Si CMOS circuits for high density infrared communication, imaging, and photodetection applications.
研究不足
The study is limited by the relatively low photoconductive gain of the GeQDs compared to literature values for GeNW photodetectors, attributed to the high resistance in the as-grown SiNWs. Future work could explore doping in the SiNW segments or shortening the contact length to facilitate photocurrent extraction.
1：Experimental Design and Method Selection:
The study employs a low temperature self-condensation process of uniform amorphous Si (a-Si)/a-Ge bilayers at 300 oC to fabricate GeQD photodetectors. The methodology includes the use of self-aligned silicon nanowire electrodes for addressing individual GeQDs.
2：Sample Selection and Data Sources:
The samples are fabricated based on a bilayer of a-Si/a-Ge thin films, with the GeQDs formed through a unique nanoscale droplet dynamic process.
3：List of Experimental Equipment and Materials:
The fabrication involves a plasma-enhanced chemical vapor deposition (PECVD) system for depositing a-Si and a-Ge thin films, and electron beam lithography (EBL) for electrode patterning.
4：Experimental Procedures and Operational Workflow:
The process includes the formation of In droplets, deposition of a-Si/a-Ge bilayers, annealing to activate droplet movement, and selective removal of remnant layers by H2 plasma etching.
5：Data Analysis Methods:
The photodetector performance is characterized by measuring responsivity and photoconductive gain under 1550 nm wavelength illumination.
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