研究目的
Demonstrating a GeSn-on-insulator platform for monolithic optoelectronic integration for applications at 2 μm wavelength.
研究成果
The work successfully demonstrated a GeSn-on-insulator platform for monolithic optoelectronic integration, showing promising results for both photonic and electronic devices operating at 2 μm wavelength. The platform paves the way for future integration of GeSn-based photonics and electronics.
研究不足
The bandwidth of the photodiode is limited by large parasitic capacitance, which could be improved through further optimization by isolating the photodiode mesa and using thicker BOX with high resistivity Si handle wafer.
1：Experimental Design and Method Selection:
The study involved the fabrication of a GeSn-on-insulator (GeSnOI) platform using direct wafer bonding and layer transfer technique for monolithic integration of photonics and electronic devices.
2：Sample Selection and Data Sources:
GeSn film with a thickness of ~85 nm was grown on a strain-relaxed Ge buffer on a Si donor wafer by reduced pressure chemical vapor deposition (RPCVD).
3：List of Experimental Equipment and Materials:
Equipment included RPCVD for GeSn film growth, plasma enhanced CVD (PECVD) for SiO2 deposition, chemical mechanical polishing (CMP) for planarization, and inductively coupled plasma (ICP) for Ge buffer thinning. Materials included GeSn film, SiO2 layer, and Si handle wafer.
4：Experimental Procedures and Operational Workflow:
The process involved GeSn film growth, SiO2 deposition and planarization, wafer bonding, Si donor wafer removal, Ge buffer thinning, and device fabrication including photodiode and FinFET.
5：Data Analysis Methods:
Optical and electrical characterization of the devices was performed, including dark current-bias voltage (Idark-Vbias) measurements and responsivity-bias voltage (Rop-Vbias) characteristics.
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