研究目的
To investigate and design resonant-cavity-enhanced GeSn photodetectors for high-response short-wavelength infrared (SWIR) detection.
研究成果
The designed RCE GeSn PDs with a 10% Sn content achieved a quantum efficiency up to 91% at 2000 nm, demonstrating the potential of RCE GeSn PDs for high-response SWIR detection.
研究不足
The study is focused on the design and simulation of RCE GeSn PDs, with experimental validation limited to the characterization of the grown GeSn material and simulation results.
1：Experimental Design and Method Selection:
The study involves the growth of GeSn with a 10% Sn content and the design of RCE PDs for 2000-nm operation. The quantum efficiency of the RCE PDs is analyzed using the transfer matrix method for reflectance simulation.
2：Sample Selection and Data Sources:
A 560 nm GeSn layer with 1000 nm Ge virtual substrate was grown on (100) Si substrate by a CVD deposition tool.
3：List of Experimental Equipment and Materials:
CVD deposition tool from Applied Materials, Si/SiO2 DBR, and air/GeSn interface as mirrors.
4：Experimental Procedures and Operational Workflow:
The GeSn material was characterized, and the RCE PD was designed with careful consideration of the quantum efficiency equation involving reflectance of mirrors and cavity length.
5：Data Analysis Methods:
The reflectance of the Si/SiO2 DBR was simulated, and the quantum efficiency was calculated based on the designed RCE structure.
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