研究目的
Investigating the performance of high-speed germanium pin photodiodes integrated on silicon-on-insulator nanophotonic waveguides for optical communications.
研究成果
The study demonstrates superior high-speed performances of pin photodetectors with lateral Si-Ge-Si heterojunctions, achieving high responsivity, fast response, and low dark currents under low-bias operation.
研究不足
The study is limited by the fabrication process and material properties, which may affect the scalability and performance uniformity of the devices.
1：Experimental Design and Method Selection:
The study focuses on the design and fabrication of pin photodetectors with lateral silicon-germanium-silicon heterojunctions on silicon-on-insulator substrates.
2：Sample Selection and Data Sources:
Devices were fabricated on 200 mm SOI wafers using a CMOS production line.
3：List of Experimental Equipment and Materials:
Silicon-on-insulator substrates with 220 nm thick Si layers and 2 μm thick Buried OXides, germanium, and doped Si slabs.
4：Experimental Procedures and Operational Workflow:
Fabrication involved creating a 260-nm-thick intrinsic Ge region sandwiched between doped Si slabs within a deeply etched Si cavity. Off-chip coupling was performed with surface grating couplers.
5：Data Analysis Methods:
Static current-voltage measurements, small-signal radio-frequency tests, and large-signal data link acquisitions were used to characterize the detectors.
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