研究目的
To investigate the performance of P3HT/GaAs NW HSCs in terms of its light absorption and optical generation properties using FDTD method, and to optimize the geometrical parameters like diameter (D) of NW and filling ratio or periodicity to achieve superior light absorption and maximum short circuit current density (Jsc).
研究成果
The study concluded that P3HT with conformal coating thickness of 50 nm is optimal for GaAs NWs, and an increment of nearly 6 mA/cm2 in Jsc is observed after the polymer coating. GaAs NWs with D = 240 nm have shown broad absorption spectrum, attributed to low surface reflection and transmission of the incident light. NWs with filling ratios between 0.6–0.7 were found to be optimal, showing significant improvement in optical generation rates and Jsc. The simulation showed that Jsc as high as 41.01 mA/cm2 can be achieved with GaAs NWs of D = 240 nm, filling ratio = 0.6 for P3HT conformal coating thickness of 50 nm.
研究不足
The study is limited by the fabrication difficulty of nanowires with certain lengths and the inability to compute the electrical transport properties in organic semiconductor materials using the charge solver in device simulation.