1：Experimental Design and Method Selection:

The integration of a thermopile device with a photonic chip was performed using thermocompression type flip-chip bonding. The photonic device was fabricated on a silicon-on-insulator (SOI) wafer with specific Si device layer and buried oxide (BOX) thicknesses. The design of the grating coupler was optimized by FDTD simulation.

2：Sample Selection and Data Sources:

The photonics chip and thermopile chip were used as samples. The optical characterization was done using a MIR-laser in the 3.64-3.90 μm spectral range.

3：64-90 μm spectral range. List of Experimental Equipment and Materials:

3. List of Experimental Equipment and Materials: SOI wafer, Ni/Au electrodes, aluminum (Al) wedges, MIR-laser, IR photodetector, lock-in amplifier, parameter analyzer, Fourier-transform IR spectroscopy (FTIR).

4：Experimental Procedures and Operational Workflow:

The waveguide and grating couplers were patterned via electron beam lithography and reactive ion etching. Ni/Au electrodes were patterned via laser writer and deposited using sputter. Al wedges were formed using a wire-bonding tool. The thermopile chip was flipped and bonded onto the grating coupler area using thermocompression.

5：Data Analysis Methods:

The optical spectra and photovoltage outputs were measured and analyzed. The frequency spectrum was fitted with a low-pass filter behavior to determine the thermal time constant.