研究目的
Investigating the development of a sub-terahertz monolithic semiconductor source based on a high power, long-wavelength quantum cascade laser for higher nonlinear susceptibility in the sub-terahertz frequency region.
研究成果
The study successfully demonstrates a sub-THz source based on high-power, long-wavelength MIR DAU-QCLs with a single DFB grating, achieving a sub-THz emission frequency of ~700 GHz at room temperature and an output power of 103 μW at 110 K. This represents the lowest reported frequency in any single monolithic semiconductor laser source, offering new opportunities for THz applications.
研究不足
The study is limited by the challenges of achieving population inversion in low-frequency QCLs and the high absorption for lower THz radiation in doped QCL active regions and waveguides.
