研究目的
Optimization of SnO2-based electron-selective contacts for Si/PEDOT:PSS heterojunction solar cells to improve their power conversion efficiency.
研究成果
The planar Si/PEDOT:PSS HSCs with EDTA-SnO2/SiOx bilayer ESCs achieve a higher η of 11.52% compared to 10.13% for HSCs with SnO2 ESCs, primarily due to improved Voc and FF. The study demonstrates the potential of EDTA-SnO2/SiOx bilayer ESCs in enhancing the performance of Si-based solar cells.
研究不足
The study notes that SnO2 and EDTA-SnO2 cannot effectively passivate the dangling bonds on the silicon surface, limiting the Jsc of the solar cells. The insertion of a SiOx film increases contact resistance, though it improves passivation.
1：Experimental Design and Method Selection:
The study involves doping SnO2 with EDTA to improve its Fermi level and combining it with a thin SiOx film for better surface passivation. The performance of these modified ESCs is evaluated in Si/PEDOT:PSS heterojunction solar cells.
2：Sample Selection and Data Sources:
Silicon wafers (1–3 Ω?cm, 270 μm) are used as the substrate. SnO2 and EDTA-SnO2 solutions are prepared for ESC fabrication.
3：List of Experimental Equipment and Materials:
Includes a Keithley 2400 source for J-V measurements, UV ozone cleaning system for SiOx preparation, and spin-coating equipment for ESC application.
4：Experimental Procedures and Operational Workflow:
Silicon wafers are cleaned and treated with hydrofluoric acid. SnO2 or EDTA-SnO2 is spin-coated, followed by Ag electrode plating. PEDOT:PSS is then applied and annealed.
5：Data Analysis Methods:
J-V curves, EQE measurements, XPS, KPFM, and minority carrier lifetime measurements are used to analyze the performance and properties of the ESCs and solar cells.
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