研究目的
Investigating the synthesis and physical properties of low cost, non toxic, earth abundant p-type CuInS2 thin film as absorber layer for photovoltaic application.
研究成果
The CuInS2 thin film was successfully deposited on glass substrates, demonstrating nanostructured growth with single tetragonal phase. The optical band gap was found to decrease with increasing temperature, and the film was confirmed to be p-type. These findings suggest potential for tuning the optical band gap of CIS films for future photovoltaic applications.
研究不足
The presence of metal sulfide and oxide impurities in the CIS film increases the energy band gap from its optimum value. The study did not employ sulfurization of the as-deposited films, leading to the detection of oxide phases such as In2O3 in the XRD.
1：Experimental Design and Method Selection:
The study employed chemical solution deposition method for synthesizing CIS thin films on glass substrates at low processing temperatures.
2：Sample Selection and Data Sources:
Precursor solutions were prepared using Copper (II) Chloride Dihydrate, Indium trichloride trihydrate, and Thiourea dissolved in 2-methoxy ethanol.
3：List of Experimental Equipment and Materials:
Spin coater, AFM, XRD, UV-Vis spectrometer, Hall Effect measurement setup.
4：Experimental Procedures and Operational Workflow:
The process involved mixing precursor solutions, spin coating on glass substrates, baking, and annealing under nitrogen atmosphere.
5：Data Analysis Methods:
AFM for morphology, XRD for crystallographic structure, UV-Vis for optical properties, and Hall Effect for electrical properties.
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