研究目的
To optimize a two-step liquid phase crystallization process for realizing large-grain epitaxial germanium (Ge) on silicon substrates.
研究成果
The two-step annealing process at 950°C for 5 mins and 930°C for 2 hours is optimal for achieving highly crystalline Ge films on Si substrates, with grain sizes of 2-5 μm and a FWHM of 0.08° in rocking curve XRD measurements.
研究不足
The study focuses on the optimization of annealing duration at 930°C in the two-step LPC process. The effect of other parameters such as temperature variations in the first step or different cooling rates was not explored.
1：Experimental Design and Method Selection:
The process involves a two-step annealing of amorphous Ge films on silicon (100) substrates, first at 950°C for 5 minutes, then cooling to 930°C and maintaining for varying durations (0, 1, 2, 5 hours).
2：Sample Selection and Data Sources:
n-type Si(1,0,0) samples with resistivity 1-10 were cleaned and amorphous germanium (1μm) was grown using PECVD.
3：List of Experimental Equipment and Materials:
OXFORD plasma enhanced chemical vapour deposition (PECVD) system, three-zone tube furnace (Lindberg blue M), scanning electron microscope (SEM, Zeiss ultra55?), Raman spectroscopy, XRD (Rikago Smartlab?).
4：Experimental Procedures and Operational Workflow:
Samples were annealed in a controlled H2 environment, characterized using SEM, Raman spectroscopy, and XRD to assess crystallinity and surface morphology.
5：Data Analysis Methods:
XRD measurements and rocking curve analysis were used to evaluate crystallinity and grain orientation.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
