研究目的
To measure for the first time the concentration distribution profiles of majority carriers in sharply inhomogeneous and polytype-doped heterojunction multilayer solar cells (HJT cells) across the whole depth from both sides, including the distributions across the antireflection coatings.
研究成果
The study successfully obtained for the first time, by using the technique of electrochemical capacitance–voltage profiling, the distribution profiles of the majority carrier concentration across the whole thickness of HJT samples of solar cells. The measurements were made both on test structures having no ITO capping layers and on working structures with double-side ITO coating. The given procedure is a rather effective way to monitor test structures and finished devices of solar photoelectronics.
研究不足
The 'blind' profiling zone due to the instrumental restriction of modern capacitance measuring equipment and the dependence of the position of the first point in the experimental depth dependence of the concentration on a multitude of factors.
1:Experimental Design and Method Selection:
The study employed electrochemical capacitance–voltage (ECV) profiling to examine heterojunction solar cells based on single-crystal silicon. The technique was chosen for its ability to furnish information about both the impurity distribution and the free carrier concentration.
2:Sample Selection and Data Sources:
Double-side heterostructures with thin amorphous (a-Si) and microcrystalline (mc-Si) layers were examined. These structures are used as the active elements of modern photovoltaic converters based on single-crystal silicon.
3:List of Experimental Equipment and Materials:
A Nanometrics ECVPro installation was used for electrochemical capacitance–voltage profiling. A 0.1–0.2 M aqueous solution of ammonium bifluoride (NH4HF2) with addition of isopropanol (20 vol %) served as the electrolyte for creating a rectifying contact.
4:1–2 M aqueous solution of ammonium bifluoride (NH4HF2) with addition of isopropanol (20 vol %) served as the electrolyte for creating a rectifying contact.
Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: The procedure used to perform measurements by the ECV technique and the specific features of measurements for structures with a sharply inhomogeneous doping profile were described. The distribution profiles of the majority carrier density across the depth of the heterostructures under study were measured.
5:Data Analysis Methods:
The observed distribution profile of the majority carrier concentration was analyzed, including the concentration distribution profile on the side of the n+-layer and that on the side of the p+-layer.
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