研究目的
Investigating the use of Ge2Sb2Te5 (GST) phase change material in silicon photonic devices for non-volatile optical transmission tuning and low-power applications.
研究成果
The research demonstrates significant progress in implementing non-volatile photonic devices using GST phase change material, achieving up to 20 dB transmission contrast and multi-level operation, which is crucial for reducing static power consumption in silicon photonic devices.
研究不足
The number of switching levels is currently limited by the noise of the photodetector. The complexity of optical waveforms due to co-existed effects like phase-change, free-carrier generation, and thermo-optic effects.
1：Experimental Design and Method Selection:
The study reviews progress on Si-GST hybrid photonic devices, focusing on all-optical and electrically-driven phase change mechanisms.
2：Sample Selection and Data Sources:
Utilizes GST films deposited on silicon waveguides and microring resonators.
3：List of Experimental Equipment and Materials:
Includes GST films, silicon waveguides, microring resonators, and electrical/optical pulse generators.
4：Experimental Procedures and Operational Workflow:
Involves applying optical or electrical pulses to induce phase change in GST, monitoring transmission changes.
5：Data Analysis Methods:
Analyzes transmission spectra and temporal responses to phase change pulses.
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