研究目的
Designing and fabricating indium antimonide photovoltaic cells for use in a near-field thermophotovoltaic device demonstrator.
研究成果
The fabricated InSb cells behave as efficient diodes, and generate a photovoltaic power with short-circuit currents of several microamps and open-circuit voltages of dozens of millivolts. These results demonstrate that these photovoltaic cells will be suitable for measuring a near-field enhancement of the generated electrical power.
研究不足
The study acknowledges the limitation in near-field thermal radiation measurement setups is the temperature of the hot side (thermal emitter in a NF-TPV device). The largest values reached so far are 720 K (the cold side being at 460 K) and ~655 K (the cold side being at near room temperature).
1：Experimental Design and Method Selection:
The study investigates the optimum conditions for growing the p-n junction stack of the cell by means of solid-source molecular beam epitaxy (MBE).
2：Sample Selection and Data Sources:
InSb detectors are fabricated using standard planar methods where the p-n junction is formed by ion implantation on the front side of an InSb bulk substrate.
3：List of Experimental Equipment and Materials:
The samples were grown by solid-source MBE on Te-doped, n-type, (001) ±
4：1° oriented InSb substrates in a multi-chamber RIBER 412 reactor equipped with an antimony-valved cracker cell providing Sb2 species. Experimental Procedures and Operational Workflow:
The technological processes for passivating the side walls of micron-sized mesa-etched p-n junction diodes and putting the front and back contacts are presented in details.
5：Data Analysis Methods:
Electrical characterizations of the cells in the dark and under far-field illumination are discussed.
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