研究目的
Investigating the high-temperature behavior of the InGaN/GaN MQW photodiode structure for potential integration as a detector in future power electronics applications.
研究成果
The InGaN/GaN MQW structure shows promising results for high-temperature photodiode applications, with a peak detectivity of 4 x 108 cmHz1/2W-1 at 800 K with zero bias at 440 nm. The spectral response increases up to 400 K and degrades at higher temperatures. The specific detectivity degrades with applied bias voltages due to higher bias-induced internal noise.
研究不足
The study is limited by the high-temperature operation of the device and the potential degradation due to packaging materials. The experiments were performed on bare-die devices to eliminate unwanted degradation.
1：Experimental Design and Method Selection:
The study involves high-temperature spectral and noise analysis of the InGaN/GaN MQW structure. The spectral response was measured under photovoltaic and bias modes for the temperature range of 77 - 800 K.
2：Sample Selection and Data Sources:
The InGaN/GaN MQW LED structure grown on patterned sapphire substrates (PSS) with a 20 nm GaN as a buffer layer was used.
3：List of Experimental Equipment and Materials:
A Janis ST-100 cryostat for high-temperature characterization, a tunable monochromator with a 250W, 24V tungsten halogen lamp, a calibrated Si detector, a lock-in amplifier, and a Keithley 236 source measurement unit (SMU) were used.
4：Experimental Procedures and Operational Workflow:
The spectral responses of the structure were obtained using the monochromator. The photocurrents were measured using a lock-in amplifier. Dark current-voltage (I-V) characteristics were measured in the temperature range 77 -800 K.
5：Data Analysis Methods:
The spectral responsivity, external quantum efficiency, and specific detectivity were calculated based on the measured data.
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