研究目的
Investigating the effects of different numbers of femtosecond laser pulses and various fluences on the formation of self-organized structures on silicon wafer surfaces.
研究成果
The research demonstrated that varying the number of femtosecond laser pulses and their fluence can control the formation of self-organized structures on silicon wafer surfaces, leading to fractal-like patterns. These findings have potential applications in surface nano-structuring.
研究不足
The study focuses on the morphological changes on silicon wafer surfaces under specific conditions of femtosecond laser irradiation. The generalizability to other materials or under different environmental conditions is not explored.
1：Experimental Design and Method Selection:
The study involved irradiating silicon wafer surfaces with femtosecond laser pulses of varying numbers and fluences to observe the formation of self-organized structures.
2：Sample Selection and Data Sources:
n-doped silicon wafer with a single-side polished surface (111) with 500 μm thickness was used.
3：List of Experimental Equipment and Materials:
A 40 fs Ti:sapphire laser with a chirped pulse amplification system, objective lens (OLYMPUS, UPlanFI, 4 X /
4：1), and a two-axis translation motorized stage. Experimental Procedures and Operational Workflow:
The silicon samples were cleaned, then irradiated with femtosecond laser pulses under different conditions. The morphology of the surface was analyzed using SEM.
5：Data Analysis Methods:
The ablation threshold was calculated, and the morphology of the silicon surface was studied using SEM images and image processing analyses.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
