研究目的
Investigating the improvement of the performance of AlGaN-based ultraviolet (UV)-light-emitting diodes (LEDs) using oblique-angle deposited SiO2-based omnidirectional reflectors (ODRs).
研究成果
The oblique-angle deposited SiO2/Al ODRs significantly improve the performance of AlGaN-based UV-LEDs by enhancing light extraction and current spreading. The porous SiO2/Al ODRs, in particular, offer higher reflectance and external quantum efficiency compared to conventional reflectors, making them a promising option for high-efficiency UV-LEDs.
研究不足
The study focuses on the improvement of UV-LED performance using SiO2/Al ODRs but does not explore the long-term stability or scalability of the fabrication process. The impact of environmental factors on the performance of the ODRs is also not discussed.
1：Experimental Design and Method Selection:
The study employed oblique-angle electron-beam evaporation to deposit SiO2 films on p-AlGaN to form ODRs. The refractive indices of these films were modified by varying the deposition angles.
2：Sample Selection and Data Sources:
AlGaN-based UV-LEDs were grown on c-plane sapphire substrates using a metal organic chemical vapor deposition system.
3：List of Experimental Equipment and Materials:
An e-beam evaporator was used for the deposition of SiO2 films and metal contacts. The samples were characterized using an ellipsometer, SEM, and electrical and optical measurement setups.
4：Experimental Procedures and Operational Workflow:
The fabrication process included cleaning the samples, depositing SiO2 films at various angles, forming mesh patterns for ohmic contacts, and depositing reflective metal layers. The performance of the LEDs was then evaluated.
5：Data Analysis Methods:
The reflectance of the ODRs was calculated using the transfer matrix method. The electrical and optical properties of the LEDs were measured and analyzed.
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