研究目的
Investigating the performance of high-speed germanium pin photodiodes integrated on silicon-on-insulator nanophotonic waveguides for optical communications.
研究成果
The study demonstrates superior high-speed performances of pin photodetectors with lateral Si-Ge-Si heterojunctions, achieving high responsivity, fast response, and low dark currents under low-bias operation, making them promising for optical communications.
研究不足
The study is limited by the fabrication process and the materials used, which may affect the scalability and performance of the photodetectors under different conditions.
1：Experimental Design and Method Selection:
The study focuses on the design and fabrication of pin photodetectors with lateral silicon-germanium-silicon heterojunctions on silicon-on-insulator substrates.
2：Sample Selection and Data Sources:
Devices were fabricated on 200 mm SOI wafers using a CMOS production line.
3：List of Experimental Equipment and Materials:
SOI substrates with 220 nm thick Si layers and 2 μm thick Buried OXides, surface grating couplers for off-chip coupling.
4：Experimental Procedures and Operational Workflow:
Fabrication details are provided in references [11, 12], with devices characterized by static current-voltage measurements, small-signal radio-frequency tests, and large-signal data link acquisitions.
5：Data Analysis Methods:
Responsivity and dark current measurements, bit-error-rate (BER) measurements at various data rates.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
