摘要： An investigation has been carried out on the performance of quantum ratchet embedded intermediate band solar cell by considering impact ionization in the sub-bandgap region. The architecture under investigation is modelled using Silvaco ATLAS TCAD. More emphasis has been provided in the analysis of important paradigms like quantum e?ciency, spectral response, generated electric ?eld and recombination involved in the cell, which are the sole reason behind the low e?ciency (E?), ?ll factor (FF), short circuit current density (Jsc) and open circuit voltage (Voc). The use of impact ionization solves the lower Jsc issue by generating more than one electron-hole pair by the use of single photon, while the use of ratchet band solves the voltage preservation problem by enhancing the carrier lifetime of the minority generated photocarriers. With this advanced feature, this architecture provides a higher e?ciency of > 80%.