研究目的
To achieve high performance fully printed transistors with low voltage operation by optimizing the printable dielectric layer and CNT network uniformity.
研究成果
Fully printed CNT-TFTs with thin dielectric layers (~300 nm) and uniform CNT networks can operate at low voltages (<±10 V) with high on/off ratios (>105) and mobility (>5 cm2V-1s-1), showing potential for flexible electronic applications.
研究不足
The difficulty in printing dielectric films thinner than 0.3μm due to pinholes causing shorts, and the need for optimization of printing parameters to achieve uniform and dense CNT networks.
1:Experimental Design and Method Selection:
Fabrication of fully printed CNT-TFTs on flexible substrates using AJP.
2:Sample Selection and Data Sources:
Flexible membranes such as polyimide and liquid crystal polymer were used as substrates.
3:List of Experimental Equipment and Materials:
Aerosol jet printing system AJ200, Ag Conductive Silver Nanoinks, CNT ink (IsoSol-S100? Polymer-Wrapped Nanotubes), xdi-dcs ink.
4:Experimental Procedures and Operational Workflow:
Cleaning of substrates, printing of Ag S/D electrodes, CNT network printing, dielectric layer printing, and gate electrode printing.
5:Data Analysis Methods:
Measurement of I-V characteristics using Microtech Summit 11k probe station and Keithley 4200 SCS.
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