研究目的
Investigating the effect of a ZnSe/ZnS/GaAs distributed Bragg reflector on the spectral response of a metal–semiconductor–metal (MSM)-diode.
研究成果
The MSM-photodiode with a distributed Bragg reflector based on a periodic ZnSe/ZnS/GaAs heterostructure demonstrates a two-color response at 420 and 472 nm, high quantum efficiency of 53%, and low dark current. The spectral response can be adjusted by selecting appropriate heterostructure parameters.
研究不足
The study focuses on the visible part of the spectrum and does not cover the infrared region. The fabrication process requires precise control of the heterostructure parameters to achieve the desired spectral response.
1：Experimental Design and Method Selection:
The study involves the fabrication and characterization of an MSM-photodiode with a distributed Bragg reflector based on a periodic ZnSe/ZnS/GaAs heterostructure. The reflection spectra and spectral response of the diode are calculated and experimentally measured.
2：Sample Selection and Data Sources:
The heterostructure is grown by metal organic vapor phase epitaxy (MOVPE) on a semi-insulating (100) GaAs substrate.
3：List of Experimental Equipment and Materials:
The deposition process uses diethylzinc, dimethylselenide, and diethylsulphide as precursors. The surface morphology is studied using a Smart SPM (AIST-NT) atomic force microscope (AFM). Schottky contacts are fabricated using Ni and Au layers deposited by electron beam evaporation.
4：Experimental Procedures and Operational Workflow:
The reflection spectrum of the heterostructure is calculated using the 2 × 2 matrix method. The spectral response of the MSM-diode is measured under various bias voltages.
5：Data Analysis Methods:
The agreement between calculated and experimental reflection spectra is analyzed. The spectral response characteristics of the MSM-diode are evaluated.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
