研究目的
Investigating the bandgap energy and secondary phases of Zn(O,S) buffer layers in CIGS solar cells using angle-resolved electroreflectance spectroscopy.
研究成果
Angle-resolved ER spectroscopy is effective for determining the bandgap energy and composition of Zn(O,S) buffer layers in CIGS solar cells. A secondary phase at the buffer–absorber interface was identified, with its presence influenced by thermal annealing but not by the gallium concentration in the absorber.
研究不足
The study is limited by the accuracy of the ER measurements and the need for further analytical studies to identify the chemical composition and structure of the secondary phase.
1：Experimental Design and Method Selection:
Angle-resolved electroreflectance (ER) spectroscopy was employed to study CIGS solar cells with Zn(O,S) buffer layers.
2：Sample Selection and Data Sources:
CIGS solar cells with different gallium concentrations and after thermal annealing were studied.
3：List of Experimental Equipment and Materials:
A Xe lamp, monochromator, silicon photodiode, lock-in amplifier, and multimeter were used.
4：Experimental Procedures and Operational Workflow:
ER measurements were conducted before and after thermal annealing at 150 °C and 200 °C.
5：Data Analysis Methods:
Gaussian profiles were fitted to the resonances in the averaged modulus spectrum to determine bandgap energies.
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