摘要： In this work, we investigate the influence of the internal electric field induced by the polarization inside the active region of the p-i-n photodiode on the characteristics of InN/InGaN quantum dots intermediate band solar cell. Considering the conduction and valence band offsets, the electron and hole energy levels have been determined by solving analytically the corresponding Schr?dinger equations. The hole level, usually neglected in similar studies, is taken into account to determine all the intermediate transitions. All parameters of multiple quantum dot solar cells such as open-circuit voltage, short-circuit current density and photovoltaic conversion efficiency are determined as functions of the indium content, the internal electric field, inter-dot distances and dot sizes. Our calculations show that determining the photovoltaic conversion efficiency (η) without taking into account the internal electric field leads to an overestimation of η.