研究目的
Investigating the effect of tellurium doping on the defect properties and performance of Sb2Se3 thin film solar cells.
研究成果
The introduction of tellurium into Sb2Se3 film effectively reduces the deep level defect, leading to improved power conversion efficiency. The study provides an experimental understanding of the defect formation and offers an effective approach to reduce the deep level defect formation in Sb2Se3 solar cells.
研究不足
The study focuses on the effect of tellurium doping on Sb2Se3 thin film solar cells, and the findings may not be directly applicable to other types of solar cells or materials. The efficiency improvement is modest, and further optimization is needed to achieve higher performance.
1：Experimental Design and Method Selection:
The study adopted a spin-coating and annealing process for the preparation of Sb2Se3 and Te-doped Sb2Se3 film. The Sb-Se precursor solution was prepared by dissolving Sb and Se powder in a mixture of ethylenediamine (EA) and mercaptoethanol (ME).
2：Sample Selection and Data Sources:
The molar ratios of Te/(Se+Te) in precursor solution were set to 0%, 1%, 2%, and 4% for a systematical study.
3：List of Experimental Equipment and Materials:
X-ray diffraction (XRD), UV?vis absorption spectra, X-ray photoelectron spectroscopy (XPS), X-ray fluorescence (XRF) spectroscopy, deep level transient spectroscopy (DLTS), transient absorption spectroscopy (TA), external quantum efficiency (EQE), electrochemical impedance spectroscopy (EIS).
4：Experimental Procedures and Operational Workflow:
The precursor solution was spun onto FTO/CdS layer, followed by thermal decomposition for formation of solid film. The optimized annealing condition is a two-consecutive step at 200 °C for 1 min and 400 °C for 2 min on a preheated hotplate in N2-purged glove box.
5：Data Analysis Methods:
The activation energy and capture cross-section of hole traps and electron traps were obtained from Arrhenius plots.
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X-ray diffraction
Confirm the crystal structure of the as-obtained films
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UV?vis absorption spectra
Study the light absorption properties of the films
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X-ray photoelectron spectroscopy
Probe chemical coordination of tellurium in the thin film
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X-ray fluorescence spectroscopy
Quantify the element composition in prepared thin films
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deep level transient spectroscopy
Characterize the defect properties of Sb2Se3 film
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transient absorption spectroscopy
Study carrier transport dynamics in Sb2Se3 film
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external quantum efficiency
Study how the defect property affects the photocurrent generation
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electrochemical impedance spectroscopy
Study the charge recombination resistance of the device
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