研究目的
To review three main methods of integration of III–V materials on Si, namely direct growth, bonding, and selective-area hetero-epitaxy, and discuss their advantages and challenges.
研究成果
III–V compound materials and lasers on Si substrates is a rapidly evolving research field with tremendous potential. Direct epitaxial quantum dot lasers have been able to electrically pump lasers at room temperature. Bonded lasers have already been put into commercial use. High quality III–V compound materials can be grown with ART technology. These all show the possibility of combining with traditional CMOS technology, which can be used to make high-speed communication networks in the future.
研究不足
The paper discusses the challenges of each integration method, such as material defects and thermal mismatch for direct growth, the need for high-quality, dislocation-free materials for selective-area hetero-epitaxy, and the current stage of research for ART technology.
